N-Channel Power MOSFET featuring 500V Drain-Source Voltage (Vdss) and 7.6A Continuous Drain Current (ID). This silicon, metal-oxide semiconductor FET offers a low 600mR Drain-Source On-Resistance (Rds On Max) and 83W Power Dissipation. Designed with a TO-262-3 package, it boasts fast switching characteristics with a 6ns Turn-On Delay Time and 7ns Fall Time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant component is ideal for power switching applications.
PackageTO-262-3
Current Rating7.6A
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPI08N50C3 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
7.6A
Current Rating
7.6A
Drain to Source Breakdown Voltage
560V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
500V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
750pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
83W
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
6ns
DC Rated Voltage
560V
Compliance
RoHS
Compliant
Datasheet
Infineon SPI08N50C3 Datasheet
Download the complete datasheet for Infineon SPI08N50C3 to view detailed technical specifications.
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