N-Channel Power MOSFET, 800V Drain to Source Breakdown Voltage, 8A Continuous Drain Current. Features 650mΩ Rds On, 104W Max Power Dissipation, and 1.1nF Input Capacitance. Operates from -55°C to 150°C with fast switching speeds including 7ns Fall Time, 25ns Turn-On Delay, and 65ns Turn-Off Delay. Packaged in TO-262-3, this silicon Metal-oxide Semiconductor FET is ROHS and Halogen Free compliant.
PackageTO-262-3
Current Rating8A
PolarityN-CHANNEL
Power104W
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Technical Specifications
Infineon SPI08N80C3 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
650mR
Drain to Source Voltage (Vdss)
800V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
1.1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
104W
Rds On Max
650mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Infineon SPI08N80C3 Datasheet
Download the complete datasheet for Infineon SPI08N80C3 to view detailed technical specifications.
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