Infineon
SPI10N10L
Power Field-Effect Transistor, 10.3A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
PackageTO-262-3
Current Rating10.3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPI10N10L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
10.3A
Current Rating
10.3A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
154mR
Drain to Source Voltage (Vdss)
100V
Fall Time
17.8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
444pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
154mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
27.8ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Infineon SPI10N10L Datasheet
Download the complete datasheet for Infineon SPI10N10L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.