Infineon
SPI11N60C3
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, I2PAK-3
PackageTO-262-3
Current Rating11A
PolarityN-CHANNEL
Power125W
Quick Jump:
Technical Specifications
Infineon SPI11N60C3 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
380mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
44ns
Turn-On Delay Time
10ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Infineon SPI11N60C3 Datasheet
Download the complete datasheet for Infineon SPI11N60C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.