N-channel enhancement mode power MOSFET designed for high voltage applications. Features a 600V drain-source voltage and 11A continuous drain current. Utilizes CoolMOS process technology for efficient power handling. Packaged in a TO-262 (I2PAK) through-hole plastic package with 3 pins and a tab. Maximum power dissipation is 125W, with an operating temperature range of -55°C to 150°C.
PackageTO-262
MountingThrough Hole
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Technical Specifications
Infineon SPI11N60C3HKSA1 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | TO-262 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 9.25 |
| Seated Plane Height (mm) | 14.8 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-262AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | CoolMOS |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11A |
| Maximum Drain Source Resistance | 380@10VmOhm |
| Typical Gate Charge @ Vgs | 45@10VnC |
| Typical Gate Charge @ 10V | 45nC |
| Typical Input Capacitance @ Vds | 1200@25VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon SPI11N60C3HKSA1 Datasheet
Download the complete datasheet for Infineon SPI11N60C3HKSA1 to view detailed technical specifications.
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