N-channel power MOSFET featuring 600V drain-source breakdown voltage and 15A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 280mΩ Rds On resistance and 156W power dissipation. Designed for efficient switching, it exhibits a 10ns turn-on delay and 5ns fall time. Packaged in a TO-262-3 (I2PAK) package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-262-3
Current Rating15A
PolarityN-CHANNEL
Power156W
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Technical Specifications
Infineon SPI15N60C3 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
15A
Current Rating
15A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
650V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.66nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
156W
Radiation Hardening
No
Rds On Max
280mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Infineon SPI15N60C3 Datasheet
Download the complete datasheet for Infineon SPI15N60C3 to view detailed technical specifications.
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