Infineon
SPI15N60C3HKSA1
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
PackageTO-262-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Infineon SPI15N60C3HKSA1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
15A
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.66nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
280mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
50ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPI15N60C3HKSA1 Datasheet
Download the complete datasheet for Infineon SPI15N60C3HKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
