N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 13.4A Continuous Drain Current, and 330mΩ Drain to Source Resistance. Features a 156W maximum power dissipation and operates within a temperature range of -55°C to 150°C. This silicon Metal-Oxide Semiconductor FET is housed in a TO-262-3 package with through-hole termination. Includes a 4V threshold voltage and a 1.82nF input capacitance.
PackageTO-262-3
PolarityN-CHANNEL
Power156W
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Technical Specifications
Infineon SPI15N60CFD technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
13.4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
330mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.82nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Nominal Vgs
4V
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
156W
Radiation Hardening
No
Rds On Max
330mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
47ns
Turn-On Delay Time
43ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPI15N60CFD Datasheet
Download the complete datasheet for Infineon SPI15N60CFD to view detailed technical specifications.
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