N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ drain-to-source resistance. Designed for efficient switching, it exhibits a 32ns turn-on delay and 11ns fall time. The component is housed in a TO-262-3 package, rated for 156W maximum power dissipation, and operates within a -55°C to 150°C temperature range.
PackageTO-262-3
PolarityN-CHANNEL
Power156W
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Technical Specifications
Infineon SPI15N65C3 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
650V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
9.45mm
Input Capacitance
1.6nF
Length
10.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
156W
Rds On Max
280mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
70ns
Turn-On Delay Time
32ns
Width
4.5mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPI15N65C3 Datasheet
Download the complete datasheet for Infineon SPI15N65C3 to view detailed technical specifications.
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