Infineon
SPI20N60C3HKSA1
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
PackageTO-262-3
PolarityN-CHANNEL
Power208W
Quick Jump:
Technical Specifications
Infineon SPI20N60C3HKSA1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
20.7A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
220mR
Fall Time
6.4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.4nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
190mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
59ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPI20N60C3HKSA1 Datasheet
Download the complete datasheet for Infineon SPI20N60C3HKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.