Infineon
SPI20N60CFD
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN
PackageTO-262-3
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon SPI20N60CFD technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
20.7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
220mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
6.4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.4nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Nominal Vgs
4V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
220mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Turn-Off Delay Time
59ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPI20N60CFD Datasheet
Download the complete datasheet for Infineon SPI20N60CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.