Infineon
SPI47N10
Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating47A
MountingThrough Hole
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Technical Specifications
Infineon SPI47N10 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
47A
Current Rating
47A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
2.5nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
175W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
33mR
RoHS Compliant
No
Series
SIPMOS®
DC Rated Voltage
100V
Compliance
RoHS
Not Compliant
Datasheet
Infineon SPI47N10 Datasheet
Download the complete datasheet for Infineon SPI47N10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.