Infineon
SPI70N10L
Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating70A
MountingThrough Hole
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Technical Specifications
Infineon SPI70N10L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
70A
Current Rating
70A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
4.54nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
16mR
RoHS Compliant
No
Series
SIPMOS®
DC Rated Voltage
100V
Compliance
RoHS
Not Compliant
Datasheet
Infineon SPI70N10L Datasheet
Download the complete datasheet for Infineon SPI70N10L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.