Infineon
SPI80N06S2L-11
Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating80A
MountingThrough Hole
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Technical Specifications
Infineon SPI80N06S2L-11 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Voltage (Vdss)
55V
Input Capacitance
2.65nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
158W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
11mR
RoHS Compliant
No
Series
OptiMOS™
DC Rated Voltage
55V
Compliance
RoHS
Not Compliant
Datasheet
Infineon SPI80N06S2L-11 Datasheet
Download the complete datasheet for Infineon SPI80N06S2L-11 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.