Infineon
SPI80N10L
Power Field-Effect Transistor, 80A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
PackageTO-262-3
Current Rating80A
MountingThrough Hole
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Technical Specifications
Infineon SPI80N10L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Voltage (Vdss)
100V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.54nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
14mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
82ns
Turn-On Delay Time
14ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Infineon SPI80N10L Datasheet
Download the complete datasheet for Infineon SPI80N10L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.