N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 3-ohm drain-to-source resistance (Rds On Max) and 25W power dissipation. Designed for efficient switching, it exhibits a 6ns turn-on delay and 12ns fall time. Packaged in a TO-220-3 configuration, this component operates across a wide temperature range from -55°C to 150°C.
PackageTO-220-3
Current Rating1.8A
PolarityN-CHANNEL
Power25W
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Technical Specifications
Infineon SPP02N60C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.8A
Current Rating
1.8A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
650V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
200pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
68ns
Turn-On Delay Time
6ns
DC Rated Voltage
650V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP02N60C3 Datasheet
Download the complete datasheet for Infineon SPP02N60C3 to view detailed technical specifications.
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