N-channel power MOSFET with 600V drain-source breakdown voltage and 1.8A continuous drain current. Features 3 Ohm drain-source resistance (Rds On Max) and 25W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220-3 configuration, this silicon Metal-oxide Semiconductor FET offers a 20V gate-source voltage rating and includes fast switching characteristics with turn-on and turn-off delay times of 35ns.
PackageTO-220-3
Current Rating1.8A
PolarityN-CHANNEL
Power25W
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Technical Specifications
Infineon SPP02N60S5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.8A
Current Rating
1.8A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
600V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
4.4mm
Input Capacitance
240pF
Lead Free
Lead Free
Length
8.64mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
25W
Rds On Max
3R
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
35ns
Turn-On Delay Time
35ns
DC Rated Voltage
600V
Width
10.26mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP02N60S5 Datasheet
Download the complete datasheet for Infineon SPP02N60S5 to view detailed technical specifications.
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