N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 3.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.4 ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 38W. Designed for efficient switching, it exhibits turn-on delay time of 35ns and fall time of 15ns. Packaged in a TO-220-3 configuration, this component operates within a temperature range of -55°C to 150°C.
PackageTO-220-3
Current Rating3.2A
PolarityN-CHANNEL
Power38W
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Technical Specifications
Infineon SPP03N60S5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.2A
Current Rating
3.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
9.25mm
Input Capacitance
420pF
Lead Free
Contains Lead
Length
10mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
38W
Rds On Max
1.4R
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
40ns
Turn-On Delay Time
35ns
DC Rated Voltage
650V
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP03N60S5 Datasheet
Download the complete datasheet for Infineon SPP03N60S5 to view detailed technical specifications.
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