N-Channel Power MOSFET, 500V breakdown voltage, 4.5A continuous drain current, and 0.95 ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220AB package, 50W power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 10ns turn-on delay and 10ns fall time. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPP04N50C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
560V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
15.95mm
Input Capacitance
470pF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
70ns
Turn-On Delay Time
10ns
DC Rated Voltage
560V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP04N50C3 Datasheet
Download the complete datasheet for Infineon SPP04N50C3 to view detailed technical specifications.
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