N-channel Power MOSFET with 500V drain-source voltage and 4.5A continuous drain current. Features 950mΩ drain-source resistance, 10ns turn-on delay, and 70ns turn-off delay. Packaged in a TO-220AB through-hole mount with a maximum power dissipation of 50W. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPP04N50C3XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 500V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 10ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP04N50C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP04N50C3XKSA1 to view detailed technical specifications.
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