N-channel MOSFET featuring 650V drain-to-source breakdown voltage and 4.5A continuous drain current. This through-hole component offers a maximum power dissipation of 50W and a low on-resistance of 850mΩ. Key switching characteristics include a 6ns turn-on delay and 9.5ns fall time, with an input capacitance of 490pF. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPP04N60C3XKSA1 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
650V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
490pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Nominal Vgs
3V
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Threshold Voltage
3V
Turn-Off Delay Time
58.5ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPP04N60C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP04N60C3XKSA1 to view detailed technical specifications.
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