N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.95ohm Rds On and 50W maximum power dissipation. Packaged in a TO-220AB, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 15ns fall time, 55ns turn-on delay, and 60ns turn-off delay.
PackageTO-220-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPP04N60S5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 580pF |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 55ns |
| DC Rated Voltage | 650V |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP04N60S5 Datasheet
Download the complete datasheet for Infineon SPP04N60S5 to view detailed technical specifications.
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