N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 0.95ohm Rds On and 50W maximum power dissipation. Packaged in a TO-220AB, it operates from -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 15ns fall time, 55ns turn-on delay, and 60ns turn-off delay.
PackageTO-220-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPP04N60S5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
9.25mm
Input Capacitance
580pF
Lead Free
Lead Free
Length
10mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
950mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
60ns
Turn-On Delay Time
55ns
DC Rated Voltage
650V
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP04N60S5 Datasheet
Download the complete datasheet for Infineon SPP04N60S5 to view detailed technical specifications.
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