N-Channel Power MOSFET, 800V Vdss, 4A continuous drain current, and 1.3 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-220AB package with through-hole mounting. Key specifications include a 3V threshold voltage, 570pF input capacitance, and 63W maximum power dissipation. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-220
Current Rating4A
MountingThrough Hole
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Technical Specifications
Infineon SPP04N80C3XKSA1 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
800V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
9.45mm
Input Capacitance
570pF
Lead Free
Lead Free
Length
10.36mm
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Through Hole
On-State Resistance
1.3R
Package Quantity
500
Packaging
Rail/Tube
Rds On Max
1.3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
DC Rated Voltage
800V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP04N80C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP04N80C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.