N-channel power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 900mΩ at 6A. With a maximum power dissipation of 83W and a gate-source voltage rating of 20V, it operates within a temperature range of -55°C to 150°C. The component is housed in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
Voltage800V
Current41A
Current Rating6A
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Technical Specifications
Infineon SPP06N80C3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Current | 41A |
| Current Rating | 6A |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 785pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 900mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| Voltage | 800V |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP06N80C3 Datasheet
Download the complete datasheet for Infineon SPP06N80C3 to view detailed technical specifications.
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