N-channel power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 900mΩ at 6A. With a maximum power dissipation of 83W and a gate-source voltage rating of 20V, it operates within a temperature range of -55°C to 150°C. The component is housed in a TO-220-3 package and is RoHS compliant.
PackageTO-220-3
Voltage800V
Current41A
Current Rating6A
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Technical Specifications
Infineon SPP06N80C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6A
Current
41A
Current Rating
6A
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
785pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Power Dissipation
83W
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
3V
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
Voltage
800V
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP06N80C3 Datasheet
Download the complete datasheet for Infineon SPP06N80C3 to view detailed technical specifications.
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