N-Channel Power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 0.9 ohms and 0.78 ohms drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and boasts 83W power dissipation. The component is RoHS compliant and halogen-free.
PackageTO-220
Current Rating6A
MountingThrough Hole
Power83W
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Technical Specifications
Infineon SPP06N80C3XKSA1 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
6A
Current Rating
6A
Drain to Source Resistance
780mR
Drain to Source Voltage (Vdss)
800V
Halogen Free
Halogen Free
Lead Free
Lead Free
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
Number of Elements
1
On-State Resistance
900mR
Package Quantity
500
Packaging
Rail/Tube
Power Dissipation
83W
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
800V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP06N80C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP06N80C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.