N-Channel Power MOSFET featuring 800V drain-source voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 0.9 ohms and 0.78 ohms drain-to-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and boasts 83W power dissipation. The component is RoHS compliant and halogen-free.
PackageTO-220
Current Rating6A
MountingThrough Hole
Power83W
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Technical Specifications
Infineon SPP06N80C3XKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Resistance | 780mR |
| Drain to Source Voltage (Vdss) | 800V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| On-State Resistance | 900mR |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP06N80C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP06N80C3XKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.