Infineon
SPP07N60CFD
Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPP07N60CFD technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
6.6A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
650V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
790pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Nominal Vgs
4V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
83W
Rds On Max
700mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
36ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPP07N60CFD Datasheet
Download the complete datasheet for Infineon SPP07N60CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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