
The SPP07N65C3 is a high-power N-channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 7.3A and a drain to source breakdown voltage of 650V. The device has a maximum power dissipation of 83W and a drain to source resistance of 600mR. It is packaged in a TO-220-3 package and is lead-free and RoHS compliant.
Infineon SPP07N65C3 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.3A |
| Current Rating | 7.3A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 600mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 650V |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPP07N65C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
