N-Channel Power MOSFET featuring 800V drain-source voltage and 8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low Rds On of 650mΩ and a maximum power dissipation of 104W. Designed for through-hole mounting in a TO-220 package, it boasts fast switching speeds with a 7ns fall time, 25ns turn-on delay, and 65ns turn-off delay. Operating from -55°C to 150°C, this halogen-free and lead-free component is RoHS compliant.
PackageTO-220
MountingThrough Hole
Power104W
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Technical Specifications
Infineon SPP08N80C3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
800V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
15.95mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
10.36mm
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Through Hole
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Power Dissipation
104W
Rds On Max
650mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP08N80C3 Datasheet
Download the complete datasheet for Infineon SPP08N80C3 to view detailed technical specifications.
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