N-Channel Power MOSFET featuring 800V drain-source voltage and 8A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low Rds On of 650mΩ and a maximum power dissipation of 104W. Designed for through-hole mounting in a TO-220 package, it boasts fast switching speeds with a 7ns fall time, 25ns turn-on delay, and 65ns turn-off delay. Operating from -55°C to 150°C, this halogen-free and lead-free component is RoHS compliant.
PackageTO-220
MountingThrough Hole
Power104W
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Technical Specifications
Infineon SPP08N80C3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 15.95mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Power Dissipation | 104W |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP08N80C3 Datasheet
Download the complete datasheet for Infineon SPP08N80C3 to view detailed technical specifications.
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