P-channel power MOSFET with 60V drain-source breakdown voltage and 8.8A continuous drain current. Features 300mΩ drain-source resistance at a nominal Vgs of -3V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 42W. Packaged in a TO-220AB through-hole mount with 3 pins. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 14ns.
PackageTO-220AB
Current Rating-8.8A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Infineon SPP08P06P technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
8.8A
Current Rating
-8.8A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
300mR
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
-60V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
15.95mm
Input Capacitance
420pF
Lead Free
Contains Lead
Lead Pitch
2.54mm
Length
10.36mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Nominal Vgs
-3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
42W
Rds On Max
300mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
Through Hole
Turn-Off Delay Time
48ns
Turn-On Delay Time
16ns
DC Rated Voltage
-60V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP08P06P Datasheet
Download the complete datasheet for Infineon SPP08P06P to view detailed technical specifications.
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