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Technical Specifications
Infineon SPP11N60C3XKSA1 technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP11N60C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP11N60C3XKSA1 to view detailed technical specifications.
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