N-channel power MOSFET featuring 650V drain-source voltage and 11A continuous drain current. Offers 440mΩ drain-to-source resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, this silicon metal-oxide semiconductor FET boasts fast switching speeds with a 7ns fall time. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPP11N60CFD technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Drain to Source Resistance
440mR
Drain to Source Voltage (Vdss)
650V
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
15.95mm
Input Capacitance
1.2nF
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
440mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Threshold Voltage
4V
Turn-Off Delay Time
43ns
Turn-On Delay Time
34ns
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP11N60CFD Datasheet
Download the complete datasheet for Infineon SPP11N60CFD to view detailed technical specifications.
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