N-channel power MOSFET featuring 650V drain-source voltage and 11A continuous drain current. Offers 440mΩ drain-to-source resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, this silicon metal-oxide semiconductor FET boasts fast switching speeds with a 7ns fall time. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Infineon SPP11N60CFD technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.95mm |
| Input Capacitance | 1.2nF |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 34ns |
| Width | 4.57mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP11N60CFD Datasheet
Download the complete datasheet for Infineon SPP11N60CFD to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.