SPP11N60S5

N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 11A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.38ohm drain-to-source resistance (Rds On Max) and 125W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-220AB plastic housing. Key switching parameters include a 20ns fall time, 130ns turn-on delay, and 150ns turn-off delay.