Infineon
SPP11N65C3XK
Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
MountingThrough Hole
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Technical Specifications
Infineon SPP11N65C3XK technical specifications.
General
Continuous Drain Current (ID)
11A
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Through Hole
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
No
Turn-Off Delay Time
44ns
Turn-On Delay Time
10ns
Compliance
RoHS
Not CompliantNo
Datasheet
Infineon SPP11N65C3XK Datasheet
Download the complete datasheet for Infineon SPP11N65C3XK to view detailed technical specifications.
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