N-channel MOSFET with 650V drain-source breakdown voltage and 11A continuous drain current. Features 380mΩ Rds On, 125W max power dissipation, and TO-220-3 package. Operates from -55°C to 150°C with fast switching times including 10ns turn-on and 5ns fall time. RoHS compliant and lead-free.
PackageTO-220-3
Current Rating11A
PolarityN-CHANNEL
Power33W
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Technical Specifications
Infineon SPP11N65C3XKSA1 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
650V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
15.95mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
33W
Rds On Max
380mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
44ns
Turn-On Delay Time
10ns
DC Rated Voltage
650V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP11N65C3XKSA1 Datasheet
Download the complete datasheet for Infineon SPP11N65C3XKSA1 to view detailed technical specifications.
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