INFINEON

SPP11N65C3XKSA1

Datasheet

Infineon

SPP11N65C3XKSA1

Name: SPP11N65C3XKSA1 Infineon
Brand: Infineon
SKU: SPP11N65C3XKSA1

650V 11A N-CH MOSFET TO-220 380mR

N-channel MOSFET with 650V drain-source breakdown voltage and 11A continuous drain current. Features 380mΩ Rds On, 125W max power dissipation, and TO-220-3 package. Operates from -55°C to 150°C with fast switching times including 10ns turn-on and 5ns fall time. RoHS compliant and lead-free.

PackageTO-220-3

Current Rating11A

PolarityN-CHANNEL

Power33W

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Technical Specifications

Infineon SPP11N65C3XKSA1 technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	11A
Current Rating	11A
Drain to Source Breakdown Voltage	650V
Drain to Source Resistance	380mR
Drain to Source Voltage (Vdss)	650V
Fall Time	5ns
Gate to Source Voltage (Vgs)	20V
Height	15.95mm
Input Capacitance	1.2nF
Lead Free	Lead Free
Length	10.36mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	125W
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	33W
Rds On Max	380mR
RoHS Compliant	Yes
Series	CoolMOS™
Turn-Off Delay Time	44ns
Turn-On Delay Time	10ns
DC Rated Voltage	650V
Width	4.57mm