N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 11.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.38ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 125W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-220-3 package. Key switching characteristics include a 10ns turn-on delay and an 8ns fall time.
PackageTO-220-3
Current Rating11.6A
PolarityN-CHANNEL
Power125W
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Technical Specifications
Infineon SPP12N50C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11.6A
Current Rating
11.6A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
560V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
15.95mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Number of Elements
1
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
45ns
Turn-On Delay Time
10ns
DC Rated Voltage
560V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP12N50C3 Datasheet
Download the complete datasheet for Infineon SPP12N50C3 to view detailed technical specifications.
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