
N-channel Power MOSFET featuring 650V drain-source voltage and 13.4A continuous drain current. This through-hole component offers a low 330mΩ drain-to-source resistance and 156W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 43ns and fall time of 5ns. Packaged in a TO-220-3 case, this RoHS compliant and lead-free MOSFET is ideal for demanding power applications.
Infineon SPP15N60CFDXKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13.4A |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.95mm |
| Input Capacitance | 1.82nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 156W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 43ns |
| Width | 4.57mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon SPP15N60CFDXKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
