N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 280mΩ drain-to-source resistance. Designed for through-hole mounting in a TO-220-3 package, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 156W. Key switching parameters include an 11ns fall time and 32ns turn-on delay time.
PackageTO-220-3
PolarityN-CHANNEL
Power156W
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Technical Specifications
Infineon SPP15N65C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
280mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.6nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
156W
Rds On Max
280mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Turn-Off Delay Time
70ns
Turn-On Delay Time
32ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPP15N65C3 Datasheet
Download the complete datasheet for Infineon SPP15N65C3 to view detailed technical specifications.
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