Infineon
SPP15P10PGHKSA1
Power Field-Effect Transistor, 15A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
MountingThrough Hole
Power128W
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Technical Specifications
Infineon SPP15P10PGHKSA1 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.28nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
128W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Power Dissipation
128W
Rds On Max
240mR
RoHS Compliant
No
Series
SIPMOS®
Compliance
RoHS
Not Compliant
Datasheet
Infineon SPP15P10PGHKSA1 Datasheet
Download the complete datasheet for Infineon SPP15P10PGHKSA1 to view detailed technical specifications.
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