The SPP15P10PGHKSA1 is a SIPMOS MOSFET from Infineon, featuring a TO-220-3 package and through hole mount. It operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 128W. The device has a maximum drain to source voltage of 100V and a maximum gate to source voltage of 20V. It also has a continuous drain current of 15A and an on-resistance of 240mR.
PackageTO-220-3
MountingThrough Hole
Power128W
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Technical Specifications
Infineon SPP15P10PGHKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.28nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 128W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 128W |
| Rds On Max | 240mR |
| RoHS Compliant | No |
| Series | SIPMOS® |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPP15P10PGHKSA1 Datasheet
Download the complete datasheet for Infineon SPP15P10PGHKSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.