INFINEON

SPP16N50C3XKSA1

Datasheet

Infineon

SPP16N50C3XKSA1

Name: SPP16N50C3XKSA1 Infineon
Brand: Infineon
SKU: SPP16N50C3XKSA1

560V 16A N-CH MOSFET TO-220AB

N-channel power MOSFET featuring 560V drain-source breakdown voltage and 16A continuous drain current. This TO-220-3 packaged transistor offers a low Rds(on) of 280mΩ at a nominal Vgs of 3V. Designed for efficient switching, it exhibits fast switching characteristics with turn-on delay time of 10ns and fall time of 8ns. Maximum power dissipation is rated at 160W, with operating temperatures ranging from -55°C to 150°C.

PackageTO-220-3

Current Rating16A

PolarityN-CHANNEL

Power160W

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Technical Specifications

Infineon SPP16N50C3XKSA1 technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	16A
Current Rating	16A
Drain to Source Breakdown Voltage	560V
Drain to Source Resistance	280mR
Drain to Source Voltage (Vdss)	560V
Dual Supply Voltage	560V
Fall Time	8ns
Gate to Source Voltage (Vgs)	20V
Height	15.95mm
Input Capacitance	1.6nF
Length	10.36mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	160W
Nominal Vgs	3V
Package Quantity	500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	160W
Rds On Max	280mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	CoolMOS™
Termination	Through Hole
Turn-Off Delay Time	50ns
Turn-On Delay Time	10ns
DC Rated Voltage	560V
Width	4.57mm