P-channel power MOSFET featuring 60V drain-source breakdown voltage and 18.7A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 130mΩ drain-source resistance (Rds On Max) and 81.1W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 12ns turn-on delay and 11ns fall time.
PackageTO-220AB
Current Rating-18.6A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Infineon SPP18P06P technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
18.7A
Current Rating
-18.6A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
-60V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
9.45mm
Input Capacitance
860pF
Lead Pitch
2.54mm
Length
10.36mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
81.1W
Mount
Through Hole
Nominal Vgs
-3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
81.1W
Rds On Max
130mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Termination
Through Hole
Turn-Off Delay Time
25ns
Turn-On Delay Time
12ns
DC Rated Voltage
-60V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP18P06P Datasheet
Download the complete datasheet for Infineon SPP18P06P to view detailed technical specifications.
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