N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 190mΩ drain-source resistance and 208W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range. Key switching characteristics include a 10ns turn-on delay and 4.5ns fall time.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 20.7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 190mR |
| Drain to Source Voltage (Vdss) | 600V |
| Dual Supply Voltage | 650V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.25mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Rds On Max | 190mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 10ns |
| Width | 4.4mm |
| RoHS | Compliant |
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