N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20.7A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 190mΩ drain-source resistance and 208W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates within a -55°C to 150°C temperature range. Key switching characteristics include a 10ns turn-on delay and 4.5ns fall time.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon SPP20N60C3 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
20.7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
190mR
Drain to Source Voltage (Vdss)
600V
Dual Supply Voltage
650V
Fall Time
4.5ns
Gate to Source Voltage (Vgs)
20V
Height
9.25mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
10mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
190mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Turn-Off Delay Time
67ns
Turn-On Delay Time
10ns
Width
4.4mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP20N60C3 Datasheet
Download the complete datasheet for Infineon SPP20N60C3 to view detailed technical specifications.
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