N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 24.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 160mΩ Rds On and 240W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it boasts fast switching speeds with a 13ns turn-on delay and 14ns fall time. Operating from -55°C to 150°C, this RoHS compliant component is ideal for high-power applications.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 24.3A |
| Current Rating | 24.3A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.45mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 10.36mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 240W |
| Nominal Vgs | 3V |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 240W |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 650V |
| Width | 4.57mm |
| RoHS | Compliant |
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