N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 24.3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 160mΩ Rds On and 240W maximum power dissipation. Designed for through-hole mounting in a TO-220-3 package, it boasts fast switching speeds with a 13ns turn-on delay and 14ns fall time. Operating from -55°C to 150°C, this RoHS compliant component is ideal for high-power applications.
PackageTO-220-3
Current Rating24.3A
PolarityN-CHANNEL
Power240W
Quick Jump:
Technical Specifications
Infineon SPP24N60C3 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
24.3A
Current Rating
24.3A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
9.45mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
10.36mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
240W
Nominal Vgs
3V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
240W
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Turn-Off Delay Time
140ns
Turn-On Delay Time
13ns
DC Rated Voltage
650V
Width
4.57mm
Compliance
RoHS
Compliant
Datasheet
Infineon SPP24N60C3 Datasheet
Download the complete datasheet for Infineon SPP24N60C3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
