N-channel power MOSFET featuring 600V drain-source breakdown voltage and 21.7A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 185mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 240W. Designed for through-hole mounting in a TO-220-3 package, it operates within a temperature range of -55°C to 150°C and boasts fast switching speeds with a 50ns turn-on delay and 9ns fall time. RoHS compliant and lead-free.
PackageTO-220-3
PolarityN-CHANNEL
Power240W
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Technical Specifications
Infineon SPP24N60CFD technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
21.7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
185mR
Drain to Source Voltage (Vdss)
650V
Dual Supply Voltage
650V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.16nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
240W
Nominal Vgs
4V
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
240W
Radiation Hardening
No
Rds On Max
185mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS™
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
100ns
Turn-On Delay Time
50ns
Compliance
RoHS
Compliant
Datasheet
Infineon SPP24N60CFD Datasheet
Download the complete datasheet for Infineon SPP24N60CFD to view detailed technical specifications.
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