Infineon
SPP80N06S-08
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
PackageTO-220-3
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon SPP80N06S-08 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
32ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.66nF
Lead Free
Contains Lead
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
8mR
RoHS Compliant
Yes
Series
SIPMOS®
Turn-Off Delay Time
54ns
Turn-On Delay Time
22ns
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
Infineon SPP80N06S-08 Datasheet
Download the complete datasheet for Infineon SPP80N06S-08 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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