P-channel MOSFET featuring a 60V drain-source voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 23mΩ Rds On resistance and a maximum power dissipation of 340W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C and is RoHS and Halogen Free compliant. Key switching characteristics include a 24ns turn-on delay and a 30ns fall time.
PackageTO-220
MountingThrough Hole
Power340W
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Technical Specifications
Infineon SPP80P06PHXKSA1 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.033nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 340W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 340W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPP80P06PHXKSA1 Datasheet
Download the complete datasheet for Infineon SPP80P06PHXKSA1 to view detailed technical specifications.
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