N-channel power MOSFET featuring 650V drain-source breakdown voltage and 800mA continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 6-ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 11W. Designed for through-hole mounting in a TO-251 package, it operates within a temperature range of -55°C to 150°C and boasts fast switching speeds with a 30ns fall time and 30ns turn-on delay. This RoHS compliant component is ideal for power switching applications.
PackageTO-251-3
PolarityN-CHANNEL
Power11W
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Technical Specifications
Infineon SPS01N60C3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 100pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 11W |
| Nominal Vgs | 3V |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 11W |
| Rds On Max | 6R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPS01N60C3 Datasheet
Download the complete datasheet for Infineon SPS01N60C3 to view detailed technical specifications.
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