N-channel power MOSFET featuring 600V drain-to-source breakdown voltage and 4.5A continuous drain current. This silicon Metal-oxide Semiconductor FET offers 0.95ohm drain-to-source resistance and 50W maximum power dissipation. Designed for efficient switching, it exhibits turn-on delay time of 55ns and fall time of 15ns. Packaged in a TO-251AA (IPAK-3) plastic housing, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-251-3
Current Rating4.5A
PolarityN-CHANNEL
Power50W
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Technical Specifications
Infineon SPU04N60S5 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 950mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 580pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 55ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPU04N60S5 Datasheet
Download the complete datasheet for Infineon SPU04N60S5 to view detailed technical specifications.
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