N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 6.6A continuous drain current. Offers 700mΩ drain-source resistance at 4V nominal gate-source voltage. Designed for high-power applications with 83W maximum power dissipation and a TO-247-3 package. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 9ns fall time.
PackageTO-247-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon SPW07N60CFD technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Nominal Vgs | 4V |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 700mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon SPW07N60CFD Datasheet
Download the complete datasheet for Infineon SPW07N60CFD to view detailed technical specifications.
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