N-Channel Power MOSFET featuring 650V drain-source breakdown voltage and 11A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 440mΩ Rds On resistance and 125W maximum power dissipation. Designed for through-hole mounting in a TO-247 package, it operates within a -55°C to 150°C temperature range and boasts fast switching speeds with a 7ns fall time. The component is RoHS compliant and lead-free.
PackageTO-247-3
Current Rating11A
PolarityN-CHANNEL
Power125W
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Technical Specifications
Infineon SPW11N60CFD technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 440mR |
| Drain to Source Voltage (Vdss) | 650V |
| Dual Supply Voltage | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Nominal Vgs | 4V |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 440mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 650V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon SPW11N60CFD Datasheet
Download the complete datasheet for Infineon SPW11N60CFD to view detailed technical specifications.
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