SPW11N60S5

N-channel MOSFET, 600V drain-source breakdown voltage, 11A continuous drain current, and 380mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a TO-247 package, 125W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 130ns turn-on delay, 150ns turn-off delay, and a 20ns fall time. Input capacitance is 1.46nF, with a maximum gate-to-source voltage of 20V. This RoHS compliant component is supplied in rail/tube packaging.